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PDF 1N4151 Data sheet ( Hoja de datos )
| Número de pieza | 1N4151 | |
| Descripción | 500mW 75 Volt Silicon Epitaxial Diode | |
| Fabricantes | Micro Commercial Components | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N4151 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MCC
omponents
21201 Itasca Street Chatsworth
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1N4151
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35°C/W Junction To Ambient
500mW 75 Volt Silicon
Epitaxial Diode
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
VRM 75V
DC Blocking Voltage
VR
50V
Average Rectified
IO 150mA Resistive Load
Current
f > 50Hz
Power Dissipation
PTOT
500mW
Junction
Temperature
TJ 150°C
Peak Forward Surge IFSM 500mA 8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
VF 1.0V IFM = 50mA;
TJ = 25°C*
Maximum DC
Reverse Current At IR 50nA VR=50Volts
Rated DC Blocking
TJ = 25°C
Voltage
Typical Junction
Capacitance
CJ 2pF Measured at
1.0MHz, VR=4.0V
Reverse Recovery Trr 4nS IF=10mA
Time
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A --- .166 ---
B --- .079 ---
C --- .020 ---
D 1.000 --- 25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N4151.PDF ] | |
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