(PDF) 1N4150W Datasheet - SMALL SIGNAL DIODES

Número de pieza	1N4150W
Descripción	SMALL SIGNAL DIODES
Fabricantes	General Semiconductor
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No Preview Available ! 1N4150W SMALL SIGNAL DIODES SOD-123 .022 (0.55) Cathode Mark Top View .067 (1.70) .055 (1.40) min. .010 (0.25) FEATURES ¨ Silicon Epitaxial Planar Diode ¨ For general purpose and switching. ¨ This diode is also available in other case styles including the DO-35 case with the type designation 1N4150 and the MiniMELF case with the type designation LL4150. MECHANICAL DATA Case: SOD-123 Plastic Case Weight: approx. 0.01 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified. Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25¡C Maximum Forward Voltage Drop at IF = 200 mA Maximum Reverse Current at VR = 50 V Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF Maximum Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that electrodes are kept at ambient temperature SYMBOL VRM IO Ptot VF IR Trr Tj TS VALUE 50 200 410 (1) 1.0 100 4.0 150 Ð65 to +150 UNIT V mA mW V nA ns ¡C ¡C 1/4/99 1 page

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PDF 1N4150W Data sheet ( Hoja de datos )