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1N4150UR-1 の電気的特性と機能

1N4150UR-1のメーカーはMicrosemi Corporationです、この部品の機能は「MINI-MELF-SMD Silicon Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N4150UR-1
部品説明 MINI-MELF-SMD Silicon Diode
メーカ Microsemi Corporation
ロゴ Microsemi Corporation ロゴ 




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1N4150UR-1 Datasheet, 1N4150UR-1 PDF,ピン配置, 機能
MINI-MELF-SMD 1N4150UR-1
Silicon Diode
Applications
Switching
Used in general purpose applications, where a low current controlled
forward characteristic and fast switching speed are important.
BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
MIL-S-19500/ 231 with internal source control drawings.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating for
problem free solderability
Available in DO-35 package
UR Approval to Mil-S-19500/231
LL-34/35 M INI MELF
Surface Mount Package DO-213AA
0.10"R EF
2.54 m m R EF
L e n g th
0 .1 3 - 0 .1 4 6 "
3.30-3.70 m m
Both End Caps
0 .0 1 6 - .0 2 2 "
0.41-0.55 m m
D ia .
.063-.067"
1.6-1.7m m
Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage
PIV
75 (Min.)
Volts
Average Rectified Current
IAvg
Continuous Forward Current
IFdc
Peak Surge Current (tpeak = 1 sec.)
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Ipeak
Ptot
Operating Temperature Range
T
Op
Storage Temperature Range
TSt
Electrical Characteristics @ 25 oC
Symbol Minimum
200
400
0.5
500
-65 to +200
-65 to +200
Maximum
mAmps
mAmps
Amp
mWatts
oC
oC
Unit
Forward Voltage Drop @ IF = 1.0 mA
Forward Voltage Drop @ IF = 10 mA
Forward Voltage Drop @ IF = 50 mA
Forward Voltage Drop @ IF = 100 m
Forward Voltage Drop @ IF = 200 mA
Reverse Leakage Current @ V = 50 V
R
Breakdown Voltage @ Ir = 0.1 mA
VF
VF
VF
VF
VF
I
R
PIV
0.54
0.66
0.76
0.80
0.87
75
0.62
0.74
0.86
0.92
1.0
0.1 (100 @ 150 oC)
Volts
Volts
Volts
Volts
Volts
µA
Volts
Capacitance @ VR = 0 V, f = 1mHz
CT
2.5
Reverse Recovery time (note 1)
t
rr
4.0
Reverse Recovery time (note 2,3)
t
rr
6.0
Forward Recovery time (note 4)
Vfr
10
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I = 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
F
Note 4: Per Method 4026 with IF = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
pF
nSecs
nSecs
nSecs
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
MSC0960.PDF

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共有リンク

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部品番号部品説明メーカ
1N4150UR-1

MINI-MELF-SMD Silicon Diode

Microsemi Corporation
Microsemi Corporation
1N4150UR-1

SWITCHING DIODE

Compensated Deuices Incorporated
Compensated Deuices Incorporated


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