DataSheet.jp

1N4150 の電気的特性と機能

1N4150のメーカーはMicrosemi Corporationです、この部品の機能は「Silicon Switching Diode DO-35 Glass Package」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N4150
部品説明 Silicon Switching Diode DO-35 Glass Package
メーカ Microsemi Corporation
ロゴ Microsemi Corporation ロゴ 




このページの下部にプレビューと1N4150ダウンロード(pdfファイル)リンクがあります。

Total 1 pages

No Preview Available !

1N4150 Datasheet, 1N4150 PDF,ピン配置, 機能
Silicon Switching Diode111NNN4oo1r r510
Applications
1N14N150-1
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
Full approval to Mil-S-19500/231
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
M a xim u m Ra ting s
Pea k Invers e Volta g e
Sym bol
PIV
Va lu e
75 (M in.)
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 sec.)
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrica l Cha ra cteris tics @ 25 oC
Sym bol
IAvg
IFdc
Ipeak
Ptot
TOp
TSt
M inim u m
200
400
0.5
500
-65 to +200
-65 to +200
M a xim u m
Forw a rd Volta g e Drop @ IF = 1.0 m A
Forw a rd Volta g e Drop @ IF = 10 m A
Forw a rd Volta g e Drop @ IF = 50 m A
Forw a rd Volta g e Drop @ IF = 10 0 m
Forw a rd Volta g e Drop @ IF = 20 0 m A
Revers e Lea k a g e Cu rrent @ VR = 50 V
Brea k dow n Volta g e @ Ir = 0 .1 m A
VF
VF
VF
VF
VF
Ir
PIV
0 .54 0 .62
0 .66 0 .74
0 .76 0 .86
0 .80 0 .92
0 .87 1.0
0 .1 (10 0 @ 150 oC)
75
Ca pa cita nce @ VR = 0 V, f = 1m Hz
Revers e Recovery tim e (note 1)
Revers e Recovery tim e (note 2,3)
Forw a rd Recovery tim e (note 4)
CT
trr
trr
V fr
2.5
4.0
6.0
10
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I = 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
F
Note 4: Per Method 4026 with I = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
F
U nit
Volts
mAmps
mAmps
Amp
mWatts
oC
oC
U nit
V o lts
V o lts
V o lts
V o lts
V o lts
µA
V o lts
pF
nS e c s
nS e c s
nS e c s
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135

1 Page







ページ 合計 : 1 ページ
 
PDF
ダウンロード
[ 1N4150 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
1N4150

High-speed diodes

NXP Semiconductors
NXP Semiconductors
1N4150

Silicon Epitaxial Planar Diode

Vishay Telefunken
Vishay Telefunken
1N4150

SIGNAL DIODE

Rectron Semiconductor
Rectron Semiconductor
1N4150

High Conductance Ultra Fast Diode

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap