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PDF AT29LV256-15TI Data sheet ( Hoja de datos )

Número de pieza AT29LV256-15TI
Descripción 256K 32K x 8 3-volt Only CMOS Flash Memory
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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AT29LV256
Features
Single Supply Voltage, Range 3V to 3.6V
3-Volt-Only Read and Write Operation
Software Protected Programming
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Fast Read Access Time - 200 ns
•• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (64 bytes/sector)
Internal Address and Data Latches for 64-Bytes
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
Description
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW over the commercial
temperature range. When the device is deselected, the CMOS standby current is less
than 20 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
256K (32K x 8)
3-volt Only
CMOS Flash
Memory
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PLCC Top View
AT29LV256
TSOP Top View
Type 1
0563A
4-33

1 page




AT29LV256-15TI pdf
AT29LV256
AC Read Characteristics
Symbol
tACC
tCE (1)
tOE (2)
tDF (3, 4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or
Address, whichever occurred first
AC Read Waveforms (1, 2, 3, 4)
AT29LV256-15
Min Max
150
150
0 70
0 40
0
AT29LV256-20
Min Max
200
200
0 100
0 50
0
AT29LV256-25
Min Max
250
250
0 120
0 60
0
Units
ns
ns
ns
ns
ns
Notes:
1. CE may be delayed up to tACC - tCE after the address transi-
tion without impact on tACC .
2. OE may be delayed up to tCE - tOE after the falling edge
of CE without impact on tCE or by tACC - tOE after an address
change without impact on tACC .
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ Max
CIN 4 6
COUT
8 12
Note: 1. These parameters are characterized and not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
4-37

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