DataSheet.jp


Datasheet BC848 PDF ( 特性, スペック, ピン接続図 )

部品番号 BC848
部品説明 Small Signal Transistors (NPN)
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 
プレビュー
Total 6 pages
		
11

No Preview Available !

BC848 Datasheet, BC848 PDF,ピン配置, 機能
BC846 THRU BC849
Small Signal Transistors (NPN)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
FEATURES
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
VCBO
VCBO
VCBO
VCES
VCES
VCES
VCEO
VCEO
VCEO
VEBO
VEBO
IC
ICM
IBM
–IEM
Ptot
Tj
TS
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
3101)
150
–65 to +150
Unit
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
5/98

1 Page



BC848 pdf, ピン配列
BC846 THRU BC849
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
Emitter-Base Capacitance
at VEB = 0.5 V, f = 1 MHz
Noise Figure
at VCE = 5 V, IC = 200 µA, RG = 2 k,
f = 1 kHz, f = 200 Hz BC846, BC847, BC848
BC849
at VCE = 5 V, IC = 200 µA, RG = 2 k,
f = 30…15000 Hz
BC849
Symbol
CCBO
CEBO
F
F
F
Min.
Typ.
3.5
9
2
1.2
1.4
Max.
6
Unit
pF
pF
10 dB
4 dB
4 dB
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
66


3Pages


BC848 電子部品, 半導体
RATINGS AND CHARACTERISTIC CURVES BC846 THRU BC849

6 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ BC848.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
BC845DL

There is a function of P4 Socket 478 MotherBoard.

BCM
BCM
BC846

There is a function of 100 mA NPN general-purpose transistors.

NXP
NXP
BC846

There is a function of NPN EPITAXIAL SILICON TRANSISTOR.

Fairchild Semiconductor
Fairchild Semiconductor
BC846

There is a function of Small Signal Transistors (NPN).

General Semiconductor
General Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap