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BC847のメーカーはFairchild Semiconductorです、この部品の機能は「NPN EPITAXIAL SILICON TRANSISTOR」です。 |
部品番号 | BC847 |
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部品説明 | NPN EPITAXIAL SILICON TRANSISTOR | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとBC847ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
August 2015
BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for Automatic Insertion in Thick and Thin-film Circuits
• Low Noise: BC850
• Complement to BC856, BC857, BC858, BC859, and BC860
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number
BC846AMTF
BC846BMTF
BC846CMTF
BC847AMTF
BC847BMTF
BC847CMTF
BC848BMTF
BC848CMTF
BC850AMTF
BC850CMTF
Marking
8AA
8AB
8AC
8BA
8BB
8BC
8CB
8CC
8EA
8EC
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Note:
1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type
packing.
© 2002 Fairchild Semiconductor Corporation
BC846 / BC847 / BC848 / BC850 Rev. 1.9
1
www.fairchildsemi.com
1 Page Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB = 30 V, IE = 0
VCE = 5 V, IC = 2 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 100 MHz
Cob Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
Cib Input Capacitance
VEB = 0.5 V, IC = 0, f = 1 MHz
BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA,
NF
Noise BC850
Figure
BC850
RG = 2 kΩ, f = 1 kHz
VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 Hz
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
Min.
110
580
Typ.
90
200
700
900
660
300
3.5
9
2.0
1.2
1.4
Max.
15
800
250
600
700
720
6.0
10.0
4.0
3.0
Unit
nA
mV
mV
mV
MHz
pF
pF
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC846 / BC847 / BC848 / BC850 Rev. 1.9
3
www.fairchildsemi.com
3Pages 6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ BC847 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BC845DL | P4 Socket 478 MotherBoard | BCM |
BC846 | 100 mA NPN general-purpose transistors | NXP Semiconductors |
BC846 | NPN EPITAXIAL SILICON TRANSISTOR | Fairchild Semiconductor |
BC846 | Small Signal Transistors (NPN) | General Semiconductor |