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Datasheet BC337-40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BC337-40 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 5 |  JCET | transistor |
| 2 | BC337-40 | NPN Transistor Small Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - |  Taiwan Semiconductor | transistor |
| 3 | BC337-40 | NPN Plastic-Encapsulate Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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Features
x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Ca |  MCC | transistor |
| 4 | BC337-40 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 5 |  JIANGSU CHANGJIANG | transistor |
| 5 | BC337-40 | NPN general purpose transistor BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC817
SOT23
BC817W
SOT323
BC337[1]
SOT54 (TO- |  NXP Semiconductors | transistor |
BC3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BC3.5 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BC300 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO  CDIL transistor | | |
| 3 | BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 4 | BC301 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 5 | BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 6 | BC302 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 7 | BC302 | Bipolar NPN Device BC302
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 45V
5.08 (0.200) typ.
IC  Seme LAB data | |
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