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BD135-16 の電気的特性と機能

BD135-16のメーカーはNXP Semiconductorsです、この部品の機能は「NPN power transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 BD135-16
部品説明 NPN power transistors
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BD135-16 Datasheet, BD135-16 PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12

1 Page





BD135-16 pdf, ピン配列
Philips Semiconductors
NPN power transistors
Product specification
BD135; BD137; BD139
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CONDITIONS
note 1
VALUE
100
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BD135-10; BD137-10; BD139-10
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 125 °C
IC = 0; VEB = 5 V
VCE = 2 V; (see Fig.2)
IC = 5 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA; VCE = 2 V;
(see Fig.2)
BD135-16; BD137-16; BD139-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 2 V
IC = 50 mA; VCE = 5 V;
f = 100 MHz
DC current gain ratio of the
complementary pairs
IC= 150 mA; VCE= 2 V
MIN. TYP. MAX. UNIT
− − 100 nA
− − 10 µA
− − 100 nA
40
63
25
250
63
160
100
250
− − 0.5 V
−−1V
190 MHz
1.3 1.6
1999 Apr 12
3


3Pages


BD135-16 電子部品, 半導体
Philips Semiconductors
NPN power transistors
Product specification
BD135; BD137; BD139
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 12
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
BD135-10

NPN power transistors

NXP Semiconductors
NXP Semiconductors
BD135-10

NPN SILICON TRANSISTORS

Siemens Semiconductor Group
Siemens Semiconductor Group
BD135-16

NPN power transistors

NXP Semiconductors
NXP Semiconductors
BD135-16

NPN SILICON TRANSISTORS

Siemens Semiconductor Group
Siemens Semiconductor Group


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