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PDF BCW60D Data sheet ( Hoja de datos )
| Número de pieza | BCW60D | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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BCW60A/B/C/D
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TSTG
32
32
5
100
350
150
Unit
V
V
V
mA
mW
°C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVCEO
BVEBO
ICES
IEBO
hFE
Test Conditions
IC=2mA, IB=0
IE=1µA, IC=0
VCB=32V, VBE=0
VEB=4V, IC=0
VCE=5V, IC=10µA
VCE=5V, IC=2mA
VCE=1V, IC=50mA
VCE(sat)
VBE(sat)
VBE(sat)
COB
fT
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
VCE=5V, IC=2mA
VCB=10V, IE=0
f=1MHz
IC=10mA, VCE=5V
Min
32
5
20
40
100
120
180
250
380
60
70
90
100
0.7
0.6
0.55
125
Max
20
20
220
310
460
630
0.55
0.35
1.05
0.85
0.75
4.5
Unit
V
V
nA
nA
V
V
V
V
V
pF
MHz
Noise Figure
Turn On Time
Turn Off Time
MARKING CODE
NF IC=0.2mA, VCE=5V
RG=2KΩ, f=1KHz
tON IC=10mA, IB1=1mA
tOFF VBB=3.6V, IB2=1mA
R1=R2=5KΩ,RL=990Ω
6 dB
150 ns
800 ns
TYPE
MARK.
BCW60A
AA
BCW60B
AB
BCW60C
AC
BCW60D
AD
©1999 Fairchild Semiconductor Corporation
Rev. B
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW60D.PDF ] | |
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