|
|
Número de pieza | BFP650 | |
Descripción | High Linearity Silicon Germanium Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP650 (archivo pdf) en la parte inferior de esta página. Total 29 Páginas | ||
No Preview Available ! BFP650
High Linearity Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-09-13
RF & Protection Devices
1 page BFP650
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP650 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA. . . . . . . . . . . . . 17
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 20
Figure 5-9 Collector Base Capacitance CCCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 70 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 30 / 70 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Source Impedance for Minimum Noise Figure opt = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . 23
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 7-3 Marking Example (Marking BFP650: R5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 7-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
5 Revision 1.1, 2012-09-13
5 Page 5 Electrical Characteristics
BFP650
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4
Collector emitter leakage current
ICES
–
–
Collector base leakage current
Emitter base leakage current
DC current gain
ICBO
IEBO
hFE
–
–
100
Values
Typ. Max.
4.5 –
0.1 1
1 40
1 40
10 500
170 250
Unit Note / Test Condition
V IC = 3 mA, IB = 0
Open base
μA VCE = 13 V, VBE = 0
nA VCE = 5 V, VBE = 0
E-B short circuited
nA VCB = 5 V, IE = 0
Open emitter
nA VEB = 0.5 V, IC = 0
Open collector
VCE = 3 V, IC = 70 mA
Pulse measured
5.2 General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Transition frequency
Min.
fT 31
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
Values
Typ. Max.
42 –
0.26 0.4
0.45 –
1.3 –
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 70 mA,
f = 1 GHz
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 1.1, 2012-09-13
11 Page |
Páginas | Total 29 Páginas | |
PDF Descargar | [ Datasheet BFP650.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor | Infineon Technologies AG |
BFP650F | Linear Low Noise SiGe:C Bipolar RF Transistor | Infineon |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |