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BFG193 の電気的特性と機能

BFG193のメーカーはSiemens Semiconductor Groupです、この部品の機能は「NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BFG193
部品説明 NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BFG193 Datasheet, BFG193 PDF,ピン配置, 機能
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
fT = 8GHz
F = 1.3dB at 900MHz
BFG 193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 193 BFG193 Q62702-F1291
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 87 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
80
10
600
150
- 65 ... + 150
- 65 ... + 150
105
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996

1 Page





BFG193 pdf, ピン配列
BFG 193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 10 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
f = 1.8 GHz
Power gain 2)
IC = 30 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
f = 900 MHz
f = 1.8 GHz
Transducer gain
IC = 30 mA, VCE = 8 V, ZS =ZL= 50
f = 900 MHz
f = 1.8 GHz
fT
Ccb
Cce
Ceb
F
Gma
6
-
-
-
-
-
|S21e|2
-
-
-
-
8-
0.6 0.9
0.4 -
2-
1.3 -
2.1 -
15.5
10
-
-
13.5
8
-
-
2) Gma = |S21/S12| (k-(k2-1)1/2)
Unit
GHz
pF
dB
Semiconductor Group
3
Dec-13-1996


3Pages


BFG193 電子部品, 半導体
BFG 193
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
18
IC=30mA
dB
G 14
12
10
8
6
4
2
0
02468
Power Gain Gma, Gms = f(f)
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V 12
VR
VCE = Parameter
35
dB
G
25
IC=30mA
20
15
10
10V
2V
5 1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
VCE = Parameter, f = 900MHz
35
8V
IP3 dBm
5V
25
3V
2V
20
15
1V
10
0 10 20 30 40 50 60 mA 80
IC
Power Gain |S21|2= f(f)
VCE = Parameter
32
dB
26
S21
22
IC=30mA
18
14
10
6
10V
2V
2 1V
-2 0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
6
Dec-13-1996

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
BFG19

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BFG19

NPN Silicon RF Transistor

Infineon Technologies AG
Infineon Technologies AG
BFG193

NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

Siemens Semiconductor Group
Siemens Semiconductor Group
BFG193

NPN Silicon RF Transistor

Infineon Technologies AG
Infineon Technologies AG


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