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BF1202WRのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel dual-gate PoLo MOS-FETs」です。 |
部品番号 | BF1202WR |
| |
部品説明 | N-channel dual-gate PoLo MOS-FETs | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBF1202WRダウンロード(pdfファイル)リンクがあります。 Total 16 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
Product specification
Supersedes data of 1999 Dec 01
2000 Mar 29
1 Page Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDS drain-source voltage
ID drain current
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
BF1202; BF1202R
BF1202WR
Tstg storage temperature
Tj operating junction temperature
CONDITIONS
Ts ≤ 113 °C; note 1
Ts ≤ 119 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
BF1202; BF1202R
BF1202WR
Product specification
BF1202; BF1202R;
BF1202WR
MIN.
−
−
−
−
MAX.
10
30
±10
±10
UNIT
V
mA
mA
mA
− 200 mW
− 200 mW
−65
+150
°C
− 150 °C
VALUE
185
155
UNIT
K/W
K/W
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 50
MCD951
(2) (1)
100 150 200
Ts (°C)
(1) BF1202WR.
(2) BF1202; BF1202R.
Fig.4 Power derating curve.
2000 Mar 29
3
3Pages Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R;
BF1202WR
handbook,2h0alfpage
ID
(mA)
16
MCD956
12
8
4
0
0 10 20 30 40 50
IG1 (µA)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
handbook,1h6alfpage
ID
(mA)
12
MCD957
8
4
0
01
23
45
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
4
MCD958
RG1 = 68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
0
0 2 46
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
MCD959
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
02 46
VG2-S (V)
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
2000 Mar 29
6
6 Page | |||
ページ | 合計 : 16 ページ | ||
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PDF ダウンロード | [ BF1202WR データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BF1202WR | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |