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BF1202WR の電気的特性と機能

BF1202WRのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel dual-gate PoLo MOS-FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF1202WR
部品説明 N-channel dual-gate PoLo MOS-FETs
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BF1202WR Datasheet, BF1202WR PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
Product specification
Supersedes data of 1999 Dec 01
2000 Mar 29

1 Page





BF1202WR pdf, ピン配列
Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDS drain-source voltage
ID drain current
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
BF1202; BF1202R
BF1202WR
Tstg storage temperature
Tj operating junction temperature
CONDITIONS
Ts 113 °C; note 1
Ts 119 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
BF1202; BF1202R
BF1202WR
Product specification
BF1202; BF1202R;
BF1202WR
MIN.
MAX.
10
30
±10
±10
UNIT
V
mA
mA
mA
200 mW
200 mW
65
+150
°C
150 °C
VALUE
185
155
UNIT
K/W
K/W
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 50
MCD951
(2) (1)
100 150 200
Ts (°C)
(1) BF1202WR.
(2) BF1202; BF1202R.
Fig.4 Power derating curve.
2000 Mar 29
3


3Pages


BF1202WR 電子部品, 半導体
Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R;
BF1202WR
handbook,2h0alfpage
ID
(mA)
16
MCD956
12
8
4
0
0 10 20 30 40 50
IG1 (µA)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
handbook,1h6alfpage
ID
(mA)
12
MCD957
8
4
0
01
23
45
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 k(connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
4
MCD958
RG1 = 68 k
82 k
100 k
120 k
150 k
180 k
220 k
0
0 2 46
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
MCD959
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
02 46
VG2-S (V)
VDS = 5 V; Tj = 25 °C.
RG1 = 120 k(connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
2000 Mar 29
6

6 Page



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部品番号部品説明メーカ
BF1202WR

N-channel dual-gate PoLo MOS-FETs

NXP Semiconductors
NXP Semiconductors


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