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BF1101R の電気的特性と機能

BF1101RのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel dual-gate MOS-FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF1101R
部品説明 N-channel dual-gate MOS-FETs
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BF1101R Datasheet, BF1101R PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14

1 Page





BF1101R pdf, ピン配列
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage
ID drain current
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
CONDITIONS
Ts 110 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
MIN.
65
MAX.
7
30
±10
±10
200
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
VALUE
200
UNIT
K/W
250
handPbtoootk, halfpage
(mW)
200
150
100
50
0
0 50
MGL615
100 150 200
Ts (°C)
Fig.4 Power derating curve.
1999 May 14
3


3Pages


BF1101R 電子部品, 半導体
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook,2h0alfpage
ID
(mA)
16
MGS303
12
8
4
0
0 10 20 30 40 50
IG1 (µA)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
handbook,1h5alfpage
ID
(mA)
10
MGS304
5
0
012345
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 k(connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
RG1 = 47 k68 k
MGS305
82 k
100 k
120 k
150 k
180 k
220 k
4
0
02468
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
16
handbook, halfpage
ID
(mA)
12
8
MGS306
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
0 2 4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 k(connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2 voltage;
typical values.
1999 May 14
6

6 Page



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共有リンク

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部品番号部品説明メーカ
BF1101

N-channel dual-gate MOS-FETs

NXP Semiconductors
NXP Semiconductors
BF1101R

N-channel dual-gate MOS-FETs

NXP Semiconductors
NXP Semiconductors
BF1101WR

N-channel dual-gate MOS-FETs

NXP Semiconductors
NXP Semiconductors


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