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BF1101のメーカーはNXP Semiconductorsです、この部品の機能は「N-channel dual-gate MOS-FETs」です。 |
部品番号 | BF1101 |
| |
部品説明 | N-channel dual-gate MOS-FETs | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBF1101ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
1 Page Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage
ID drain current
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
CONDITIONS
Ts ≤ 110 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
MIN.
−
−
−
−
−
−65
−
MAX.
7
30
±10
±10
200
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
VALUE
200
UNIT
K/W
250
handPbtoootk, halfpage
(mW)
200
150
100
50
0
0 50
MGL615
100 150 200
Ts (°C)
Fig.4 Power derating curve.
1999 May 14
3
3Pages Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook,2h0alfpage
ID
(mA)
16
MGS303
12
8
4
0
0 10 20 30 40 50
IG1 (µA)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
handbook,1h5alfpage
ID
(mA)
10
MGS304
5
0
012345
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
RG1 = 47 kΩ 68 kΩ
MGS305
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
4
0
02468
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
16
handbook, halfpage
ID
(mA)
12
8
MGS306
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
0 2 4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2 voltage;
typical values.
1999 May 14
6
6 Page | |||
ページ | 合計 : 16 ページ | ||
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PDF ダウンロード | [ BF1101 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BF1100 | Dual-gate MOS-FETs | NXP Semiconductors |
BF1100R | Dual-gate MOS-FETs | NXP Semiconductors |
BF1100WR | Dual-gate MOS-FET | NXP Semiconductors |
BF1101 | N-channel dual-gate MOS-FETs | NXP Semiconductors |