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BF1100R の電気的特性と機能

BF1100RのメーカーはNXP Semiconductorsです、この部品の機能は「Dual-gate MOS-FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF1100R
部品説明 Dual-gate MOS-FETs
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BF1100R Datasheet, BF1100R PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R
Dual-gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25

1 Page





BF1100R pdf, ピン配列
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF1100
BF1100R
storage temperature
operating junction temperature
CONDITIONS
MIN.
see Fig.3
up to Tamb = 50 °C; note 1
up to Tamb = 40 °C; note 1
65
Note
1. Device mounted on a printed-circuit board.
MAX.
14
30
±10
±10
200
200
+150
+150
UNIT
V
mA
mA
mA
mW
mW
°C
°C
250
handbook, halfpage
Ptot
(mW)
200
MLD155
150
BF1100R BF1100
100
50
0
0 50 100 150 200
Tamb (oC)
Fig.3 Power derating curves.
40
Yfs
(mS)
30
MLD156
20
10
0
50
0
50 100 150
Tj (oC)
Fig.4 Forward transfer admittance as a function
of junction temperature; typical values.
1995 Apr 25
3


3Pages


BF1100R 電子部品, 半導体
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook,2h0alfpage
ID
(mA)
16
12
8
4
VG1 S = 1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
MLD159
0
0 4 8 12 16
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.7 Output characteristics; typical values.
handbook,2h0alfpage
ID
(mA)
16
MLD160
VG2 S = 4 V 3 V 2.5 V
2V
12
1.5 V
8
4
1V
0
0 0.4 0.8 1.2 1.6 2.0
VG1 S (V)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.8 Transfer characteristics; typical values.
handboo2k,5h0alfpage
I G1
(µA)
200
150
100
50
0
0
VG2 S = 4 V
MLD161
3.5 V
3V
2.5 V
2V
1 23
VG1 S (V)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
1995 Apr 25
handbook,4h0alfpage
y fs
(mS)
30
20
MLD162
VG2 S = 4 V
3.5 V
3V
10 2.5 V
2V
0
0 10 20 30
I D (mA)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.10 Forward transfer admittance as a function
of drain current; typical values.
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
BF1100

Dual-gate MOS-FETs

NXP Semiconductors
NXP Semiconductors
BF1100R

Dual-gate MOS-FETs

NXP Semiconductors
NXP Semiconductors
BF1100WR

Dual-gate MOS-FET

NXP Semiconductors
NXP Semiconductors


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