DataSheet.jp

BF1005SR の電気的特性と機能

BF1005SRのメーカーはInfineon Technologies AGです、この部品の機能は「Silicon N-Channel MOSFET Tetrode」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF1005SR
部品説明 Silicon N-Channel MOSFET Tetrode
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




このページの下部にプレビューとBF1005SRダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

BF1005SR Datasheet, BF1005SR PDF,ピン配置, 機能
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5 V
Integrated biasing network
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF1005S...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
NZs
NZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20

1 Page





BF1005SR pdf, ピン配列
BF1005S...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4.5 V
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 100 MHz
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Noise figure
gfs
Cg1ss
Cdss
Gp
F
26 30
- mS
- 2.4 2.7 pF
- 1.3 -
20 22
- dB
- 1.6 2.1 dB
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gain control range
Gp
40 50
-
VDS = 5 V, VG2S = 4 V ... 0 V, f = 800 MHz
3 2007-04-20


3Pages


BF1005SR 電子部品, 半導体
Package Outline
Foot Print
Package SOT143
BF1005S...
2.9 ±0.1
1.9
B
43
1±0.1
0.1 MAX.
0.2
0.8
+0.1
-0.05
12
0.4
+0.1
-0.05
0.25 M B
1.7
0.08...0.15 A
0...8˚
0.2 M A
0.8 1.2 0.8
1.2 0.8
0.8
Marking Layout (Example)
RF s
Pin 1
Manufacturer
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1
3.15
6
1.15
2007-04-20

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ BF1005SR データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
BF1005S

Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Siemens Semiconductor Group
Siemens Semiconductor Group
BF1005S

Silicon N-Channel MOSFET Tetrode

Infineon Technologies AG
Infineon Technologies AG
BF1005SR

Silicon N-Channel MOSFET Tetrode

Infineon Technologies AG
Infineon Technologies AG
BF1005SW

Silicon N-Channel MOSFET Tetrode

Infineon Technologies AG
Infineon Technologies AG


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap