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BF1005のメーカーはInfineon Technologies AGです、この部品の機能は「Silicon N-Channel MOSFET Tetrode」です。 |
部品番号 | BF1005 |
| |
部品説明 | Silicon N-Channel MOSFET Tetrode | ||
メーカ | Infineon Technologies AG | ||
ロゴ | |||
このページの下部にプレビューとBF1005ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5V
• Integrated biasing network
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BF1005...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
MZs
MZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20
1 Page BF1005...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4.5 V
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 10 MHz
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 10 MHz
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Noise figure
gfs
Cg1ss
Cdss
Gp
F
20 24
- mS
- 2.1 2.5 pF
- 1.3 -
17 19
- dB
- 1.6 2.5 dB
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gain control range
VDS = 5 V, VG2S = 4V ...0V, f = 800 GHz
∆Gp
40 50
-
3 2007-04-20
3Pages Package Outline
Foot Print
Package SOT143
BF1005...
2.9 ±0.1
1.9
B
43
1±0.1
0.1 MAX.
0.2
0.8
+0.1
-0.05
12
0.4
+0.1
-0.05
0.25 M B
1.7
0.08...0.15 A
0...8˚
0.2 M A
0.8 1.2 0.8
1.2 0.8
0.8
Marking Layout (Example)
RF s
Pin 1
Manufacturer
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1
3.15
6
1.15
2007-04-20
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ BF1005 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
BF1005 | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |