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BF1005のメーカーはSiemens Semiconductor Groupです、この部品の機能は「Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)」です。 |
部品番号 | BF1005 |
| |
部品説明 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBF1005ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Integrated stabilized bias network
BF 1005
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF 1005
Marking Ordering Code Pin Configuration
Package
MZs Q62702-F1498 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS ≤ 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
8
25
10
3
200
- 55 ...+150
150
≤370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-29958-1-1919-081
1 Page BF 1005
Total power dissipation Ptot = f (TS)
Drain current ID = f (VG2S)
300
mW
200
150
100
50
0
0
20 40 60 80 100 120 °C 150
TS
Insertion power gain
| S21 | 2 = f (VG2S)
12
mA
10
9
8
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VG2S
Forward transfer admittance
| Y21 | = f (VG2S)
10
dB
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VG2S
26
mS
22
20
18
16
14
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VG2S
SSeemmicioconndduuctcotor rGGrorouupp
33
Au 1-29958-1-1919-081
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ BF1005 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
BF1005 | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |