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BGA427 の電気的特性と機能

BGA427のメーカーはInfineon Technologies AGです、この部品の機能は「Si-MMIC-Amplifier in SIEGET 25-Technologie」です。


製品の詳細 ( Datasheet PDF )

部品番号 BGA427
部品説明 Si-MMIC-Amplifier in SIEGET 25-Technologie
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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BGA427 Datasheet, BGA427 PDF,ピン配置, 機能
BGA427
Si-MMIC-Amplifier in SIEGET 25-Technologie
 Cascadable 50 -gain block
 Unconditionally stable
 Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
 Noise figure NF = 2.2 dB at 1.8 GHz
 Typical device voltage VD = 2 V to 5 V
 Reverse isolation  35 dB (Appl.2)
3
4
2
1 VPS05605
3 +V
Circuit Diagram
4 OUT
1
IN
2
GND
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
1, IN
Pin Configuration
Package
2, GND 3, +V 4, Out SOT343
EHA07378
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 120 °C
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
ID
VD,+V
Ptot
PRFin
Tj
TA
Tstg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
 295
K/W
1 Aug-02-2001

1 Page





BGA427 pdf, ピン配列
BGA427
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
f S11
S21 S12
GHz MAG
ANG
MAG
ANG
MAG ANG
VD = 3V, Zo = 50
0.1 0.1382 -38.3
0.2 0.1179 -16
0.5 0.1697 -20.8
0.8 0.1824 -56.9
0.9 0.1782 -69.1
1 0.176 -80.6
1.5 0.1827 -133.5
1.8 0.1969 -156.1
1.9 0.2021 -162.8
2 0.2116 -167.7
2.5 0.2437 172.8
3 0.258 153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
S22
MAG ANG
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
BGA 427-chip
including parasitics
+V
13
T1
T2
R1
R2 R2
T2 R3
R4
R1 R3 C’-E’-
Diode
14
C1
OUT CP1
IN 11
C1
C P1 C P2
T1
CP3 CP4 CP5 R4
CP2
CP3
CP4
T501
T501
14.5k
280
2.4k
170
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
12 CP5 0.1pF
GND
EHA07381
C'-E'-diode T1
3 Aug-02-2001


3Pages





ページ 合計 : 5 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
BGA420

Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable)

Siemens Semiconductor Group
Siemens Semiconductor Group
BGA420

Si-MMIC-Amplifier in SIEGET 25-Technologie

Infineon Technologies AG
Infineon Technologies AG
BGA425

Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)

Siemens Semiconductor Group
Siemens Semiconductor Group
BGA427

Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)

Siemens Semiconductor Group
Siemens Semiconductor Group


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