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BGA427のメーカーはInfineon Technologies AGです、この部品の機能は「Si-MMIC-Amplifier in SIEGET 25-Technologie」です。 |
部品番号 | BGA427 |
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部品説明 | Si-MMIC-Amplifier in SIEGET 25-Technologie | ||
メーカ | Infineon Technologies AG | ||
ロゴ | |||
このページの下部にプレビューとBGA427ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
BGA427
Si-MMIC-Amplifier in SIEGET 25-Technologie
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage VD = 2 V to 5 V
Reverse isolation 35 dB (Appl.2)
3
4
2
1 VPS05605
3 +V
Circuit Diagram
4 OUT
1
IN
2
GND
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
1, IN
Pin Configuration
Package
2, GND 3, +V 4, Out SOT343
EHA07378
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 120 °C
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
ID
VD,+V
Ptot
PRFin
Tj
TA
Tstg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
295
K/W
1 Aug-02-2001
1 Page BGA427
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
f S11
S21 S12
GHz MAG
ANG
MAG
ANG
MAG ANG
VD = 3V, Zo = 50
0.1 0.1382 -38.3
0.2 0.1179 -16
0.5 0.1697 -20.8
0.8 0.1824 -56.9
0.9 0.1782 -69.1
1 0.176 -80.6
1.5 0.1827 -133.5
1.8 0.1969 -156.1
1.9 0.2021 -162.8
2 0.2116 -167.7
2.5 0.2437 172.8
3 0.258 153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
S22
MAG ANG
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
BGA 427-chip
including parasitics
+V
13
T1
T2
R1
R2 R2
T2 R3
R4
R1 R3 C’-E’-
Diode
14
C1
OUT CP1
IN 11
C1
C P1 C P2
T1
CP3 CP4 CP5 R4
CP2
CP3
CP4
T501
T501
14.5k
280
2.4k
170
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
12 CP5 0.1pF
GND
EHA07381
C'-E'-diode T1
3 Aug-02-2001
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ BGA427 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BGA420 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable) | Siemens Semiconductor Group |
BGA420 | Si-MMIC-Amplifier in SIEGET 25-Technologie | Infineon Technologies AG |
BGA425 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) | Siemens Semiconductor Group |
BGA427 | Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) | Siemens Semiconductor Group |