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Datasheet BFR93 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BFR93 | RF TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO v EBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Totai Device Dissipation, T/\ = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
'Thermal | Motorola Semiconductors | transistor |
2 | BFR93 | NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93 NPN 5 GHz wideband transistor
Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES • Very low intermodulation | NXP Semiconductors | transistor |
3 | BFR93 | Silicon NPN Planar RF Transistor BFR93/BFR93R
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain D Low noise figure D High transition frequency
1 1
13 | Vishay Telefunken | transistor |
4 | BFR93 | Silicon NPN Planar RF Transistor BFR93/BFR93R
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain D Low noise figure D High transition frequency
1
1
2
3
94 9280
3
2
95 10527
BFR93 Marking: R1 Plastic case (SOT 23) 1= Collector; 2= B | TEMIC Semiconductors | transistor |
5 | BFR93A | Silicon NPN transistor BFR93A
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features 高功率增益,低噪声输出,非常低的互调失真。 High power gain, low noise figure, very low intermodulation dist | BLUE ROCKET ELECTRONICS | transistor |
BFR Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BFR106 | NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106 NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f NXP Semiconductors transistor | | |
2 | BFR106 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) BFR 106
NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Siemens Semiconductor Group transistor | | |
3 | BFR106 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta Infineon Technologies AG transistor | | |
4 | BFR106 | Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB New Jersey Semiconductor data | | |
5 | BFR14B | NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz Siemens Semiconductor Group transistor | | |
6 | BFR14C | NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz Siemens Semiconductor Group transistor | | |
7 | BFR180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | |
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