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BS170のメーカーはNXP Semiconductorsです、この部品の機能は「N-channel vertical D-MOS transistor」です。 |
部品番号 | BS170 |
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部品説明 | N-channel vertical D-MOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBS170ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
BS170
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
1 Page Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC) at Tc = 25 °C
Total power dissipation up to Tamb = 25 °C
Storage temperature range
Junction temperature
VDS
VDG
VGS
ID
Ptot
Tstg
Tj
THERMAL RESISTANCE
From junction to ambient
Rth j-a
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
VGS = 0; ID = 100 µA
V(BR)DS
Gate threshold voltage
VGS = VDS; ID = 1 mA
VGS(th)
Gate-source leakage current
VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 25 V; VGS = 0
Drain-source ON-resistance (note 1)
VGS = 10 V; ID = 200 mA
Forward transconductance (note 1)
VDS = 10 V; ID = 200 mA; f = 1 kHz
Capacitances at f = 1 MHz
VDS = 10 V; VGS = 0
IGSoff
IDSS
RDS(on)
gfs
Ciss
Switching times at ID = 200 mA
ID = 200 mA; VDS = 50 V;
VGS = 0 to 10 V
Cos
Crs
ton
toff
April 1995
3
max.
max.
max.
max.
max.
max.
60 V
60 V
15 V
500 mA
830 mW
−55 to +150 °C
150 °C
= 150 K/W
min.
typ.
min.
max.
max.
max.
typ.
max.
typ.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
60 V
90 V
0.8 V
3.0 V
10 nA
0.5 µA
2.5 Ω
5.0 Ω
200 mS
25 pF
40 pF
22 pF
30 pF
6 pF
10 pF
4 ns
10 ns
4 ns
10 ns
3Pages Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
BS170
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ BS170 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BS170 | TMOS FET Switching(N-Channel-Enhancement) | Motorola Inc |
BS170 | N-channel vertical D-MOS transistor | NXP Semiconductors |
BS170 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | Siemens Semiconductor Group |
BS170 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |