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BR1000のメーカーはEIC discrete Semiconductorsです、この部品の機能は「SILICON BRIDGE RECTIFIERS」です。 |
部品番号 | BR1000 |
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部品説明 | SILICON BRIDGE RECTIFIERS | ||
メーカ | EIC discrete Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBR1000ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.158 (4.00)
0.142 (3.60)
0.520 (13.20)
0.480 (12.20)
AC
0.290 (7.36)
0.210 (5.33)
AC
0.77 (19.56)
0.73 (18.54)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forw ard Current Tc=55°C
IF(AV)
10 Amp.
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forw ard Voltage per Diode at IF = 5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amp.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ BR1000 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BR100 | Silicon Bi-directional Trigger Device | NXP Semiconductors |
BR100 | (BR100 / BR103) Silicon Bi-directional Trigger Device | Philips |
BR1000 | Bridge Rectifier | Formosa MS |
BR1000 | SILICON BRIDGE RECTIFIERS | EIC discrete Semiconductors |