BR100 Datasheet PDF - NXP Semiconductors
| Part Number | BR100 | |
| Description | Silicon Bi-directional Trigger Device | |
| Manufacturers | NXP Semiconductors | |
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Philips Semiconductors
Silicon Bi-directional Trigger Device
Product Specification
BR100/03 LLD
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope suitable for surface
mounting. The device is intended for
use in triac and thyristor trigger
circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V(BO)
VO
IFRM
Breakover voltage
Output voltage
Repetitive peak forward current
MIN. MAX. UNIT
28 36
7-
-2
V
V
A
OUTLINE - SOD80
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
IFRM
Repetitive peak forward
t ≤ 10 µs, Ttp ≤ 50˚C; f = 60 Hz
current
Ptot
Total power dissipation
Ttp = 50˚C
Tstg Storage temperature
Tj Operating junction
temperature
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Thermal resistance junction to PCB mounted
tie point
CHARACTERISTICS
Ta = 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
V(BO)
|V(BO)+| - |V(BO)-|
VO
I(BO)
dV(BO)/dT
tr
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V(BO)
Risetime
CONDITIONS
I = I(BO)
I = I(BO), see fig: 1
RL = 20 Ω; Circuit of fig: 2
V = V(BO)
Ip = 0.5 A; Circuit of fig: 2
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
˚C
˚C
MIN. TYP. MAX. UNIT
- 330 - K/W
MIN.
28
-
7
-
-
TYP.
32
-
-
-
0.1
MAX.
36
3.5
-
50
-
UNIT
V
V
V
µA
%/K
- 1.5
µs
February 1996
1
Rev 1.000
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BR100 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BR100.PDF Datasheet ] | |
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