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PDF BT150-500R Data sheet ( Hoja de datos )
| Número de pieza | BT150-500R | |
| Descripción | Thyristors logic level | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Thyristors
logic level
Product specification
BT150 series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT150-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
2.5 2.5 2.5
444
35 35 35
V
A
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb ≤ 113 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
2.5
4
35
38
6.1
50
2
5
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997
1
Rev 1.300
1 page  
Philips Semiconductors
Thyristors
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
3,7
2,8
1,3
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
Product specification
BT150 series
4,5
max
5,9
min
15,8
max
0,6
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.300
5 Page | ||
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| PDF Descargar | [ Datasheet BT150-500R.PDF ] | |
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