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BT150 の電気的特性と機能

BT150のメーカーはNXP Semiconductorsです、この部品の機能は「Thyristors logic level」です。


製品の詳細 ( Datasheet PDF )

部品番号 BT150
部品説明 Thyristors logic level
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BT150 Datasheet, BT150 PDF,ピン配置, 機能
Philips Semiconductors
Thyristors
logic level
Product specification
BT150 series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT150-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
2.5 2.5 2.5
444
35 35 35
V
A
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb 113 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
2.5
4
35
38
6.1
50
2
5
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kor less.
October 1997
1
Rev 1.300

1 Page





BT150 pdf, ピン配列
Philips Semiconductors
Thyristors
logic level
Product specification
BT150 series
6 Ptot / W
conduction form
angle
factor
5
degrees
30
a
4
60 2.8
90 2.2
4 120 1.9
180 1.57
34
2
BT148
Tmb(max) / C
110
1.9
2.2
2.8
112.5
a = 1.57
115
117.5
120
1 122.5
0 125
0 0.5 1 1.5 2 2.5 3
IF(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
BT148
dIT/dt limit
100
IT ITSM
T time
Tj initial = 25 C max
10
10us
100us
T/s
1ms
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 10ms.
5 IT(RMS) / A
4
BT148
113 C
3
2
1
0-50 0 50 100 150
Tmb / C
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
40
30
20
IT ITSM
T time
Tj initial = 25 C max
10
01 10 100 1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
12 IT(RMS) / A
BT150
10
8
6
4
2
0
0.01
0.1 1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 113˚C.
VGT(Tj)
1.6 VGT(25 C)
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997
3
Rev 1.300


3Pages


BT150 電子部品, 半導体
Philips Semiconductors
Thyristors
logic level
Product specification
BT150 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.300

6 Page



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