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BT132-600D の電気的特性と機能

BT132-600DのメーカーはNXP Semiconductorsです、この部品の機能は「4Q Triac」です。


製品の詳細 ( Datasheet PDF )

部品番号 BT132-600D
部品説明 4Q Triac
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BT132-600D Datasheet, BT132-600D PDF,ピン配置, 機能
BT132-600D
4Q Triac
15 January 2014
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package
intended for use in general purpose bidirectional switching and phase control
applications. This very sensitive gate "series D" triac is intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
Enhanced current surge capability
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate
3. Applications
Air conditioner indoor fan control
Battery powered applications
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 16 A
- - 1A
- 2 5 mA
-
2.5 5
mA
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BT132-600D pdf, ピン配列
NXP Semiconductors
BT132-600D
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 1A
- 16 A
- 17.5 A
- 1.28 A2s
- 50 A/µs
- 50 A/µs
- 50 A/µs
- 10 A/µs
- 2A
- 5W
- 0.5 W
-40 150 °C
- 125 °C
BT132-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2014
© NXP N.V. 2014. All rights reserved
3 / 13


3Pages


BT132-600D 電子部品, 半導体
NXP Semiconductors
BT132-600D
4Q Triac
8. Thermal characteristics
Table 5.
Symbol
Rth(j-lead)
Thermal characteristics
Parameter
thermal resistance
from junction to lead
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
full cycle; Fig. 6
half cycle; Fig. 6
printed circuit mounted: lead length = 4
mm
Min Typ Max Unit
- - 60 K/W
- - 80 K/W
- 150 - K/W
102
Zth(j-lead)
(K/W)
10
1
10- 1
(1)
(2)
P
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
1
Fig. 6.
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Transient thermal impedance from junction to lead as a function of pulse width
003aab045
tp t
tp (s)
10
BT132-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2014
© NXP N.V. 2014. All rights reserved
6 / 13

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部品番号部品説明メーカ
BT132-600D

4Q Triac

NXP Semiconductors
NXP Semiconductors


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