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BT132-600DのメーカーはNXP Semiconductorsです、この部品の機能は「4Q Triac」です。 |
部品番号 | BT132-600D |
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部品説明 | 4Q Triac | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBT132-600Dダウンロード(pdfファイル)リンクがあります。 Total 13 pages
BT132-600D
4Q Triac
15 January 2014
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package
intended for use in general purpose bidirectional switching and phase control
applications. This very sensitive gate "series D" triac is intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drivers and microcontrollers
• Enhanced current surge capability
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
• Very sensitive gate
3. Applications
• Air conditioner indoor fan control
• Battery powered applications
• General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 16 A
- - 1A
- 2 5 mA
-
2.5 5
mA
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1 Page NXP Semiconductors
BT132-600D
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 1A
- 16 A
- 17.5 A
- 1.28 A2s
- 50 A/µs
- 50 A/µs
- 50 A/µs
- 10 A/µs
- 2A
- 5W
- 0.5 W
-40 150 °C
- 125 °C
BT132-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2014
© NXP N.V. 2014. All rights reserved
3 / 13
3Pages NXP Semiconductors
BT132-600D
4Q Triac
8. Thermal characteristics
Table 5.
Symbol
Rth(j-lead)
Thermal characteristics
Parameter
thermal resistance
from junction to lead
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
full cycle; Fig. 6
half cycle; Fig. 6
printed circuit mounted: lead length = 4
mm
Min Typ Max Unit
- - 60 K/W
- - 80 K/W
- 150 - K/W
102
Zth(j-lead)
(K/W)
10
1
10- 1
(1)
(2)
P
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
1
Fig. 6.
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Transient thermal impedance from junction to lead as a function of pulse width
003aab045
tp t
tp (s)
10
BT132-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2014
© NXP N.V. 2014. All rights reserved
6 / 13
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部品番号 | 部品説明 | メーカ |
BT132-600D | 4Q Triac | NXP Semiconductors |