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Número de pieza | BSS123LT1 | |
Descripción | Power MOSFET 170 mAmps/ 100 Volts | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
VDSS
VGS
VGSM
100
±20
±40
Vdc
Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Adc
ID 0.17
IDM 0.68
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to
RqJA
556
°C/W
Ambient
Junction and Storage Temperature TJ, Tstg –55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
RDS(on) = 6 W
N–Channel
3
1
2
MARKING
DIAGRAM
3
SOT–23
CASE 318
1 STYLE 21
2
SA
W
SA = Device Code
W = Work Week
PIN ASSIGNMENT
Drain
3
© Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 3
12
Gate Source
ORDERING INFORMATION
Device
Package
Shipping
BSS123LT1
BSS123LT3
SOT–23
SOT–23
3000 Tape & Reel
10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BSS123LT1/D
1 page BSS123LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BSS123LT1.PDF ] |
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BSS123LT1 | Power MOSFET 170 mAmps/ 100 Volts | ON Semiconductor |
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