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BS870 の電気的特性と機能

BS870のメーカーはDiodes Incorporatedです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 BS870
部品説明 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
メーカ Diodes Incorporated
ロゴ Diodes Incorporated ロゴ 




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BS870 Datasheet, BS870 PDF,ピン配置, 機能
BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: S70, K70
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
GS
ED
G
H
K
J
L
Maximum Ratings @ TA = 25°C unless otherwise specified
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
M K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ
BVDSS
IDSS
IGSS
60
¾
¾
80
¾
¾
VGS(th)
RDS (ON)
ID(ON)
gFS
1.0
¾
¾
80
2.0
3.5
1.0
¾
Ciss ¾ 22
Coss ¾ 11
Crss ¾ 2.0
tD(ON)
tD(OFF)
¾
¾
2.0
5.0
BS870
60
60
±20
250
310
400
-55 to +150
Units
V
V
V
mA
mW
K/W
°C
Max Unit
Test Condition
¾ V VGS = 0V, ID = 100mA
0.5 µA VDS = 25V, VGS = 0V
±10 nA VGS = ±15V, VDS = 0V
3.0 V VDS = VGS, ID =-250mA
5.0 W VGS = 10V, ID = 0.2A
0.5 A VGS = 10V, VDS = 7.5V
¾ mS VDS =10V, ID = 0.2A
50 pF
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
5.0 pF
20 ns VES = 10V, RL = 150W,
20 ns VDS = 10V, RD = 100W
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS11302 Rev. G-2
1 of 2
BS870

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共有リンク

Link :


部品番号部品説明メーカ
BS870

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated
Diodes Incorporated
BS870

DMOS Transistors (N-Channel)

General Semiconductor
General Semiconductor


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