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PDF 1N5242B Data sheet ( Hoja de datos )
| Número de pieza | 1N5242B | |
| Descripción | Absolute Maximum Ratings | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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1N5226B - 1N5257B Series Half Watt Zeners
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 75°C
Surge Power**
-65 to +200
+ 200
+ 230
500
4.0
10
°C
°C
°C
mW
mW/°C
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Tolerance: B = 5%
DO-35
Electrical Characteristics TA = 25°C unless otherwise noted
Device
VZ
(V)
ZZ @ IZT
(Ω) (mA)
ZZK @ IZK
(Ω) (mA)
1N5226B
3.3
28
20
1,600
0.25
1N5227B
3.6
24
20
1,700
0.25
1N5228B
3.9
23
20
1,900
0.25
1N5229B
4.3
22
20
2,000
0.25
1N5230B
1N5231B
1N5232B
1N5233B
4.7 19
5.1 17
5.6 11
6.0 7.0
20
1,900
0.25
20
1,600
0.25
20
1,600
0.25
20
1,600
0.25
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
6.2 7.0
6.8 5.0
7.5 6.0
8.2 8.0
8.7 8.0
20
1,000
0.25
20 750 0.25
20 500 0.25
20 500 0.25
20 600 0.25
1N5239B 9.1 10 20 600 0.25
1N5240B 10 17 20 600 0.25
1N5241B 11 22 20 600 0.25
1N5242B 12 30 20 600 0.25
VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series
NOTE: National preferred devices in BOLD
VR @ IR
(V) (µA)
1.0 25
1.0 15
1.0 10
1.0 5.0
2.0 5.0
2.0 5.0
3.0 5.0
3.5 5.0
4.0 5.0
5.0 3.0
6.0 3.0
6.5 3.0
6.5 3.0
7.0 3.0
8.0 3.0
8.4 2.0
9.1 1.0
TC
(%/°C)
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.3
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
©1997 Fairchild Semiconductor Corporation
1N5200B Rev. A
1 page | ||
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