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PDF 1N5236B Data sheet ( Hoja de datos )
| Número de pieza | 1N5236B | |
| Descripción | Silicon Z-Diodes | |
| Fabricantes | Vishay Telefunken | |
| Logotipo |  |
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Silicon Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D VZ–tolerance ± 5%
1N5221B...1N5267B
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Test Conditions
xTL 75°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
200
–65...+200
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1.1 V
Document Number 85588
Rev. 2, 06-Aug-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1N5236B.PDF ] | |
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