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Datasheet 1N5224B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5224B | 0.5W Hermetically Sealed Glass Zener Diodes Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts - DO-35 package - Through-hole device type mounting - Hemetically sealed glass - Compression bonded construction - All extermal surfaces are corro | Taiwan Semiconductor | diode |
2 | 1N5224B | 500mW ZENER DIODES ZENER DIODES
SENSITRON SEMICONDUCTOR
OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C
500mW ZENER DIODES / DO-35/DL-35 (MINI MELF)
TYPE
Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV | SENSITRON | diode |
3 | 1N5224B | Absolute Maximum Ratings Zeners (1N5221B - 1N5279B)
Zeners 1N5221B - 1N5279B
Absolute Maximum Ratings*
Symbol
PD TSTG TJ
TA = 25°C unless otherwise noted
Tolerance = 5%
Parameter
Power Dissipation Derate above 75°C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for | Fairchild Semiconductor | diode |
4 | 1N5224B | 500mW EPITAXIAL ZENER DIODE | Diodes Incorporated | diode |
5 | 1N5224B | Silicon Z-Diodes 1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D D D D
Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junct | Vishay Telefunken | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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