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Datasheet 1N4934G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N4934GGlass Passivated Fast Recovery Rectifiers

1N4933G thru 1N4937G Taiwan Semiconductor CREAT BY ART Glass Passivated Fast Recovery Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-fre
Taiwan Semiconductor
Taiwan Semiconductor		rectifier
21N4934G1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER

1N4933G/L - 1N4937G/L 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammabili
Diodes Incorporated
Diodes Incorporated		rectifier
31N4934GFAST GPP DIODES

Leshan Radio Company
Leshan Radio Company		diode
41N4934GGLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

1N4933G THRU 1N4937G GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Capable of meeting envir
GOOD-ARK Electronics
GOOD-ARK Electronics		rectifier
51N4934G1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS

1N4933G THRU 1N4937G 1.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT FEATURES * Low forward voltage drop * Low leakage current * High reliability * High current capability * Glass passivated junction 1.0 Ampere DO-41 .107(2.7) .080(2.0) DIA. 1.0(25.4) MI
Bytes
Bytes		rectifier


1N4 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N40Diode, Rectifier

American Microsemiconductor
American Microsemiconductor		diode
21N40N-CHANNEL POWER MOSFET

1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta
Unisonic Technologies
Unisonic Technologies		mosfet
31N400010 WATT ZENER DIODES

1N2970 thru 1N3015B and 1N3993 thru 1N4000A 10 WATT ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v
Microsemi Corporation
Microsemi Corporation		diode
41N4000Zener Diode, Rectifier

S O LID STAT E INC. 1N3993 – 1N4000 Your TOTAL solutions source! 10 WATTS ZENER DIODES DO4 ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "
SOLID STATE
SOLID STATE		diode
51N400010W Zener Diodes

http://www.Datasheet4U.com
Motorola Semiconductors
Motorola Semiconductors		diode
61N4000Diode Zener Single 7.5V 20% 10W 2-Pin DO-4

New Jersey Semiconductor
New Jersey Semiconductor		diode
71N4000-1Diode Zener Single 7.5V 10% 10W 2-Pin DO-4

New Jersey Semiconductor
New Jersey Semiconductor		diode



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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