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Número de pieza | BUZ80A | |
Descripción | SIPMOS Power Transistor (N channel Enhancement mode) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ80A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! SIPMOS ® Power Transistor
• N channel
• Enhancement mode
BUZ 80A
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 80A
VDS
800 V
ID
3A
RDS(on)
3Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 50 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Ordering Code
C67078-A1309-A3
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
800
Unit
V
800
A
3
12
± 20
V
W
75
-55 ... ...+ 150 °C
-55 ... ...+ 150
≤ 1.67
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
1 page BUZ 80A
Power dissipation
Ptot = ƒ(TC)
80
W
Ptot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D 10 1
I
V
10 0
R
10 -1
tp = 670.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
3.2
A
ID
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
Semiconductor Group
10 2 V 10 3
VDS
5
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
07/96
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUZ80A.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
BUZ80 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ80 | Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
BUZ80A | N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR | STMicroelectronics |
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