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BUZ80A の電気的特性と機能

BUZ80AのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ80A
部品説明 N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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BUZ80A Datasheet, BUZ80A PDF,ピン配置, 機能
® BUZ80A
N - CHANNEL 800V - 2.5- 3.8A - TO-220
FAST POWER MOS TRANSISTOR
TYPE
BUZ80A
V DSS
800 V
RDS(on)
<3
ID
3.8 A
s TYPICAL RDS(on) = 2.5
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1998
Value
BUZ80A
800
800
± 20
3.8
2.3
15
100
0.8
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/9

1 Page





BUZ80A pdf, ピン配列
BUZ80A
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Pa ram et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V ID = 2.3 A
RG = 50
VGS = 10 V
(see test circuit, figure 3)
VDD = 600 V ID = 3.8 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
VDD = 400 V ID = 5 A VGS = 10 V
Min.
T yp.
65
150
Max.
90
200
80 110
55 70
8
26
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 600 V ID = 3.8 A
RG = 50 VGS = 10 V
(see test circuit, figure 5)
Min.
T yp.
110
140
150
Max.
145
190
200
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 4 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
Max.
3.8
15
Unit
A
A
2
500
4.3
17
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
®


3Pages


BUZ80A 電子部品, 半導体
BUZ80A
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/9
®

6 Page



ページ 合計 : 9 ページ
 
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[ BUZ80A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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BUZ80

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BUZ80A

N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR

STMicroelectronics
STMicroelectronics


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