|
|
BUZ80AのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR」です。 |
部品番号 | BUZ80A |
| |
部品説明 | N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとBUZ80Aダウンロード(pdfファイル)リンクがあります。 Total 9 pages
® BUZ80A
N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220
FAST POWER MOS TRANSISTOR
TYPE
BUZ80A
V DSS
800 V
RDS(on)
<3Ω
ID
3.8 A
s TYPICAL RDS(on) = 2.5 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1998
Value
BUZ80A
800
800
± 20
3.8
2.3
15
100
0.8
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/9
1 Page BUZ80A
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Pa ram et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V ID = 2.3 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 600 V ID = 3.8 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 400 V ID = 5 A VGS = 10 V
Min.
T yp.
65
150
Max.
90
200
80 110
55 70
8
26
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 600 V ID = 3.8 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
T yp.
110
140
150
Max.
145
190
200
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 4 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
3.8
15
Unit
A
A
2
500
4.3
17
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
®
3Pages BUZ80A
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/9
®
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ BUZ80A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BUZ80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
BUZ80 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ80 | Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
BUZ80A | N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR | STMicroelectronics |