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PDF BUZ80 Data sheet ( Hoja de datos )
| Número de pieza | BUZ80 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ80 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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BUZ80
BUZ80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ80
BUZ80FI
VDSS
800 V
800 V
R DS( on)
<4Ω
<4Ω
ID
3.4 A
2.1 A
s TYPICAL RDS(on) = 3.3 Ω
s AVALANCHE RUGGEDNESS TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
Val ue
BUZ80
BUZ80FI
800
800
± 20
3.4 2.1
2.1 1.3
13 13
100 40
0.8 0.32
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
BUZ80/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUZ80.PDF ] | |
Hoja de datos destacado
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