|
|
Número de pieza | BUZ76 | |
Descripción | 3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ76 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Semiconductor
Data Sheet
BUZ76
October 1998 File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ76)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(3A,
relay drivers, and drivers for high power bipolar switching
• 3A, 400V
• rDS(ON) = 1.800Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
400V, transistors requiring high speed and low gate drive power.
1.800 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA17404.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ76
TO-220AB
BRAND
BUZ76
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
/Key-
D
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
FET,
JEDEC TO-220AB
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page BUZ76
Typical Performance Curves Unless Otherwise Specified (Continued)
PULSE DURATION = 80µs
102
15
ID = 4.5A
101 10
100 TJ = 150oC
TJ = 25oC
5
VDS = 80V
VDS = 320V
10-1
0
0.5 1.0 1.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50kΩ
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
5
00 5
10 15 20 25
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BUZ76.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ70 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ70L | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) | Siemens Semiconductor Group |
BUZ71 | N - CHANNEL 50V - 0.085W - 17A TO-220 STripFET] POWER MOSFET | STMicroelectronics |
BUZ71 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |