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BUZ72L の電気的特性と機能

BUZ72LのメーカーはInfineon Technologies AGです、この部品の機能は「SIPMOS Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ72L
部品説明 SIPMOS Power Transistor
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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BUZ72L Datasheet, BUZ72L PDF,ピン配置, 機能
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 72L
Type
BUZ 72 L
VDS
100 V
ID
10 A
RDS(on)
0.2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 10 A, VDD = 25 V, RGS = 25
L = 885 µH, Tj = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1327-A2
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
10
40
10
7.9
Unit
A
mJ
59
± 20
Class 1
40
-55 ... + 150
-55 ... + 150
3.1
75
E
55 / 150 / 56
V
W
˚C
K/W
Data Sheet
1
05.99

1 Page





BUZ72L pdf, ピン配列
BUZ 72L
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
5
-
-
-
-
-
-
-
Values
typ.
max.
7.5 -
680 900
180 250
90 150
20 30
85 130
100 130
55 70
Unit
S
pF
ns
Data Sheet
3
05.99


3Pages


BUZ72L 電子部品, 半導体
BUZ 72L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
24 Ptot = 40W
A
20
I
D
18
l kj i h
16
14
12
10
8
6
g
VGS [V]
a 2.0
b 2.5
c 3.0
f d 3.5
e 4.0
f 4.5
g 5.0
h
e
i
5.5
6.0
j 7.0
k 8.0
d l 10.0
4
2c
0 ab
0.0 1.0 2.0 3.0 4.0 5.0 V 6.5
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.65
a
0.55
R
DS
(on)0.50
bc
d
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10 VGS [V] =
0.05
abcdef
23.05 3.5 4.0 4.5 5.0 5.5
0.00
02468
e
i ghfj
ghi j
6.0 7.0 8.0 10.0
10 12 14 A 17
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
30
A
26
ID 24
22
20
18
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
12
S
10
gfs
9
8
7
6
5
4
3
2
1
0
0 4 8 12 16 20 A 28
ID
Data Sheet
6
05.99

6 Page



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共有リンク

Link :


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BUZ72

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Siemens Semiconductor Group
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BUZ72

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Infineon Technologies AG
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BUZ72A

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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BUZ72A

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