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BUZ71AL の電気的特性と機能

BUZ71ALのメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ71AL
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ71AL Datasheet, BUZ71AL PDF,ピン配置, 機能
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 71 AL
Not for new design
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 71 AL
VDS
50 V
ID
13 A
RDS(on)
0.12
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14 A, VDD = 25 V, RGS = 25
L = 30.6 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1326-A3
Values
13
52
14
1
Unit
A
mJ
6
± 14
± 20
40
-55 ... + 150
-55 ... + 150
3.1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ71AL pdf, ピン配列
BUZ 71 AL
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 7 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
5
-
-
-
-
-
-
-
9.5 -
510 680
210 320
85 130
15 25
70 100
70 90
50 70
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ71AL 電子部品, 半導体
BUZ 71 AL
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
30 Ptot = 40W
A
l k ji h g f
ID 24
22
20
18
16
14
12
10
8
6
VGS [V]
a 2.5
e b 3.0
c 3.5
d 4.0
e 4.5
d
f 5.0
g 5.5
h 6.0
ci
j
6.5
7.0
k 8.0
l 10.0
b
4
2a
0
0.0 1.0 2.0 3.0 4.0
V 6.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.38
0.32
RDS (on)
0.28
ab
c
d
0.24
0.20
0.16
0.12
0.08
e
ig
k
f
hj
0.04
VGS [V] =
ab
c
d
e
f
23.50 3.5 4.0 4.5 5.0 5.5
0.00
0 4 8 12
ghi j k
6.0 6.5 7.0 8.0 10.0
16 20 A 26
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
50
A
ID 40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
16
S
gfs
12
10
8
6
4
2
0
0 5 10 15 20 25 A 35
ID
Semiconductor Group
6
07/96

6 Page



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共有リンク

Link :


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