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BUZ60BのメーカーはSiemens Semiconductor Groupです、この部品の機能は「main ratings」です。 |
部品番号 | BUZ60B |
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部品説明 | main ratings | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ60Bダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Semiconductor
Data Sheet
BUZ60
October 1998 File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ60
)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.5A, 400V
• rDS(ON) = 1.000Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(5.5A,
400V,
1.000
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- PART NUMBER
PACKAGE
nel BUZ60
TO-220AB
BRAND
BUZ60
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
FET)
D
/Author
() G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 Page BUZ60
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
6
VGS ≥ 10V
5
4
3
2
1
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
100
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
102
TJ
TC
=
=
MAX RATED
25oC
101
1µs
10µs
100µs
100
10-1
100
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
101 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100ms
DC
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
12
10 PD = 75W
8.0V
10V
8
VGS = 20V
PULSE DURATION = 80µs
VGS = 7.5V
VGS = 7.0V
VGS = 6.5V
6 VGS = 6.0V
4 VGS = 5.5V
VGS = 5.0V
2
VGS = 4.5V
VGS = 4.0V
0
0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
3
3Pages | |||
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部品番号 | 部品説明 | メーカ |
BUZ60 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ60 | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
BUZ60 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ60B | main ratings | Siemens Semiconductor Group |