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BUZ323 の電気的特性と機能

BUZ323のメーカーはInfineon Technologies AGです、この部品の機能は「SIPMOS Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ323
部品説明 SIPMOS Power Transistor
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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BUZ323 Datasheet, BUZ323 PDF,ピン配置, 機能
BUZ 323
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 323
VDS
400 V
ID
15 A
RDS(on)
0.3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 15 A, VDD = 50 V, RGS = 25
L = 6.14 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3127-A2
Values
15
60
15
18
Unit
A
mJ
790
± 20
170
-55 ... + 150
-55 ... + 150
0.74
75
E
55 / 150 / 56
V
W
°C
K/W
03/99

1 Page





BUZ323 pdf, ピン配列
BUZ 323
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 9.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
8
-
-
-
-
-
-
-
Values
typ.
max.
14.5 -
2300
3000
320 480
120 180
40 65
75 115
270 350
130 170
Unit
S
pF
ns
Semiconductor Group
3
03/99


3Pages


BUZ323 電子部品, 半導体
BUZ 323
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
34 Ptot = 170W l
A kj i h g f
28
ID
24
20
16
12
8
e
VGS [V]
a 4.0
b 4.5
d c 5.0
d 5.5
e 6.0
f 6.5
g
ch
7.0
7.5
i 8.0
j 9.0
k 10.0
b l 20.0
4
a
0
0 4 8 12 16 V 24
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
15
A
13
ID 12
11
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.9 a b
RDS (on) 0.7
c
0.6
0.5
d
0.4
e
f
0.3 h g
ji
k
0.2
0.1
VGS [V] =
ab
c
d
e
f
4.05 5.0 5.5 6.0 6.5 7.0
0.0
0 4 8 12
ghi j k
7.5 8.0 9.0 10.0 20.0
16 20 A 26
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
18
S
gfs 14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 A 15
ID
Semiconductor Group
6
03/99

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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