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BUZ307 の電気的特性と機能

BUZ307のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ307
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ307 Datasheet, BUZ307 PDF,ピン配置, 機能
BUZ 307
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 307
VDS
800 V
ID
3A
RDS(on)
3
Maximum Ratings
Parameter
Continuous drain current
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 3 A, VDD = 50 V, RGS = 25
L = 66.6 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3100-A2
Values
3
12
3
8
Unit
A
mJ
320
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
09/96

1 Page





BUZ307 pdf, ピン配列
BUZ 307
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 1.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1
-
-
-
-
-
-
-
1.8 -
1400 1860
85 130
30 45
20 30
60 90
80 110
50 65
Unit
S
pF
ns
Semiconductor Group
3
09/96


3Pages


BUZ307 電子部品, 半導体
BUZ 307
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
7.0 Ptot = 75W
A
6.0
ID 5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
l kj i h g
f VGS [V]
a 4.0
b 4.5
e c 5.0
d 5.5
e 6.0
f 6.5
g 7.0
d h 7.5
i 8.0
j 9.0
c k 10.0
l 20.0
b
0.5
0.0
0
a
5 10 15 20 25 30 35 V 45
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
5.0
A
ID 4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
10
RDS (on) 8
7
ab
c
de
6
5
4f
g
h
3 ji
k
2
VGS [V] =
1abc def
4.05 5.0 5.5 6.0 6.5 7.0
0
0.0 1.0 2.0 3.0
ghi j k
7.5 8.0 9.0 10.0 20.0
4.0 5.0 A 6.5
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
3.0
S
gfs
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A
ID
4.0
Semiconductor Group
6
09/96

6 Page



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共有リンク

Link :


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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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BUZ307

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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