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BUZ272のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)」です。 |
部品番号 | BUZ272 |
| |
部品説明 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ272ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
BUZ 271
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 271
VDS
-50 V
ID
-22 A
RDS(on)
0.15 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -22 A, VDD = -25 V, RGS = 25 Ω
L = 413 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1453-A2
Values
-22
Unit
A
-88
mJ
200
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 Page BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = -14 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω
Rise time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω
Fall time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.5
-
-
-
-
-
-
-
4-
2000 2700
650 975
250 375
30 45
120 180
130 175
140 190
Unit
S
pF
ns
Semiconductor Group
3
07/96
3Pages BUZ 271
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-50
Ptot = 125W
A
l
ID -40
-35
-30
-25
-20
-15
-10
-5
0
0 -2 -4 -6
VGS [V]
a -4.0
b -4.5
c -5.0
d -5.5
e -6.0
f -6.5
g -7.0
h -7.5
k
i -8.0
j j -9.0
k -10.0
i l -20.0
h
g
f
e
d
c
ab
-8 V -12
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.45
Ω
abc d e f g
h
RDS (on)0.35
i
0.30
0.25
0.20
0.15
0.10
j
0.05
0.00
VGS [V] =
abcdef
-45.05 -5.5 -6.0 -6.5 -7.0 -7.5
ghi j
-8.0 -9.0 -10.0 -20.0
0 -4 -8 -12 -16 A
ID
-24
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
-24
A
-20
ID
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
6.0
S
5.0
gfs
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 -4 -8 -12 -16 A -22
ID
Semiconductor Group
6
07/96
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ BUZ272 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BUZ27 | main ratings | Siemens Semiconductor Group |
BUZ271 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
BUZ272 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |