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BUZ272 の電気的特性と機能

BUZ272のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ272
部品説明 SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ272 Datasheet, BUZ272 PDF,ピン配置, 機能
BUZ 271
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 271
VDS
-50 V
ID
-22 A
RDS(on)
0.15
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -22 A, VDD = -25 V, RGS = 25
L = 413 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1453-A2
Values
-22
Unit
A
-88
mJ
200
± 20
125
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ272 pdf, ピン配列
BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = -14 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50
Rise time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50
Fall time
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.5
-
-
-
-
-
-
-
4-
2000 2700
650 975
250 375
30 45
120 180
130 175
140 190
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ272 電子部品, 半導体
BUZ 271
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-50
Ptot = 125W
A
l
ID -40
-35
-30
-25
-20
-15
-10
-5
0
0 -2 -4 -6
VGS [V]
a -4.0
b -4.5
c -5.0
d -5.5
e -6.0
f -6.5
g -7.0
h -7.5
k
i -8.0
j j -9.0
k -10.0
i l -20.0
h
g
f
e
d
c
ab
-8 V -12
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.45
abc d e f g
h
RDS (on)0.35
i
0.30
0.25
0.20
0.15
0.10
j
0.05
0.00
VGS [V] =
abcdef
-45.05 -5.5 -6.0 -6.5 -7.0 -7.5
ghi j
-8.0 -9.0 -10.0 -20.0
0 -4 -8 -12 -16 A
ID
-24
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
-24
A
-20
ID
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
6.0
S
5.0
gfs
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 -4 -8 -12 -16 A -22
ID
Semiconductor Group
6
07/96

6 Page



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部品番号部品説明メーカ
BUZ27

main ratings

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ271

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ272

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens Semiconductor Group
Siemens Semiconductor Group


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