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BUZ215のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode FREDFET)」です。 |
部品番号 | BUZ215 |
| |
部品説明 | SIPMOS Power Transistor (N channel Enhancement mode FREDFET) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ215ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
BUZ 215
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• FREDFET
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 215
VDS
500 V
ID
5A
RDS(on)
1.5 Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 30 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-A1400-A2
Values
500
Unit
V
500
A
5
20
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 Page BUZ 215
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.7
-
-
-
-
-
-
-
2.7 -
1500 2000
110 170
40 70
30 45
40 60
110 140
50 65
Unit
S
pF
ns
Semiconductor Group
3
07/96
3Pages BUZ 215
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
12
Ptot = 75W
A
10
ID
9
8
7
6
5
l
kj
i
VGS [V]
a 4.0
h b 4.5
c 5.0
d 5.5
g
e 6.0
f 6.5
f g 7.0
h 7.5
i 8.0
4 e j 9.0
k 10.0
3 l 20.0
d
2
c
1
0 ab
0 4 8 12 16 20 24 28 V 34
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
6.0
A
5.0
ID
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
5.0
Ωa
bc
def
RDS (on) 4.0
3.5
3.0
2.5
g
2.0
h
i
1.5
j
1.0
VGS [V] =
0.5 a b c d e f
45.05 5.5 6.0 6.5 7.0 7.5
0.0
012345
ghi j
8.0 9.0 10.0 20.0
678A
ID
10
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
5.0
S
gfs 4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 1.0 2.0 3.0 4.0 5.0
A 7.0
ID
Semiconductor Group
6
07/96
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ BUZ215 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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