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BUZ21のメーカーはInfineon Technologies AGです、この部品の機能は「SIPMOS Power Transistor」です。 |
部品番号 | BUZ21 |
| |
部品説明 | SIPMOS Power Transistor | ||
メーカ | Infineon Technologies AG | ||
ロゴ | |||
このページの下部にプレビューとBUZ21ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SIPMOS ® Power Transistor
BUZ 21
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 21
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25 Ω
L = 340 µH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1308-A2
Values
21
Unit
A
84
21
11 mJ
100
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
˚C
K/W
Data Sheet
1
05.99
1 Page BUZ 21
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 13 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
8
-
-
-
-
-
-
-
Values
typ.
max.
11 -
1000
1300
300 530
150 240
25 40
50 75
160 210
80 110
Unit
S
pF
ns
Data Sheet
3
05.99
3Pages BUZ 21
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
50
Ptot = 75Wl
A
kj
i
ID 40
35
30
25
20
15
10
h
VGS [V]
a 4.0
g b 4.5
c 5.0
d 5.5
e 6.0
f f 6.5
g
eh
7.0
7.5
i 8.0
j 9.0
d
k 10.0
l 20.0
c
5b
0a
01234567V9
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 ˚C
0.26
Ω
a b cd
e
0.22
RDS (on)0.20
0.18
0.16
0.14
0.12
f
0.10
g
0.08
h
i
0.06
j
0.04
0.02
VGS [V] =
abc
45.05 5.5 6.0
def
6.5 7.0 7.5
ghi j
8.0 9.0 10.0 20.0
0.00
0 5 10 15 20 25 30 35 A
ID
45
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
20
S
gfs 16
14
12
10
8
6
4
2
0
0 10 20 30 40 A 55
ID
Data Sheet
6
05.99
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ BUZ21 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
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BUZ20 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
BUZ20 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ201 | main ratings | Siemens Semiconductor Group |