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BUZ21のメーカーはIntersil Corporationです、この部品の機能は「19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET」です。 |
部品番号 | BUZ21 |
| |
部品説明 | 19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとBUZ21ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(19A, relay drivers, and drivers for high power bipolar switching
• 19A, 100V
• rDS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
100V, transistors requiring high speed and low gate drive power.
0.100 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA9854.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ21
TO-220AB
BRAND
BUZ21
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
/Key-
D
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
FET,
JEDEC TO-220AB
TO-
220AB)
/Creator
()
SOURCE
DRAIN
GATE
/DOCIN
FO pdf-
DRAIN (FLANGE)
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 Page BUZ21
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
30
VGS ≥ 10V
25
20
15
10
5
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0
0.01
10-5
PDM
10-4
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
102
1.5µs
10µs
101 100µs
OPERATION IN THIS
AREA LIMITED MAY BE
BY rDS(ON)
100
1ms
10ms
100ms
DC
TC = 25oC
10-1 TJ = MAX RATED
100 101
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
40
PD =
75W
20V 10V
VGS = 80V
30 VGS = 7.5V
VGS = 7.0V
VGS = 6.5V
20
VGS = 6.0V
10
0
0
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
12
FIGURE 5. OUTPUT CHARACTERISTICS
3
3Pages BUZ21
Test Circuits and Waveforms (Continued)
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50kΩ
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 19. GATE CHARGE WAVEFORMS
6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ BUZ21 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BUZ20 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ20 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
BUZ20 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ201 | main ratings | Siemens Semiconductor Group |