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BUZ20のメーカーはIntersil Corporationです、この部品の機能は「12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET」です。 |
部品番号 | BUZ20 |
| |
部品説明 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとBUZ20ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title
(BUZ20
)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
• 12A, 100V
• rDS(ON) = 0.200Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(12A, transistors requiring high speed and low gate drive power.
100V, This type can be operated directly from integrated circuits.
0.200 Formerly developmental type TA17411.
Ohm, N-
Channel Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ20
TO-220AB
BRAND
BUZ20
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
Outlines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 Page BUZ20
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
VGS ≥ 10V
10
5
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
100
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
101
102
101
OPERATION IN THIS
AREA MAY BE LIMITED
100 BY rDS(ON)
5µs
10µs
100µs
1ms
10ms
100ms
DC
TJ = MAX RATED
10-1 TC = 25oC
100 101
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
30
PD = 75W
PULSE DURATION = 80µs
VGS = 20V TJ = 25oC
VGS = 10V
20
VGS = 8.0V
VGS = 7.5V
VGS = 7.0V
10 VGS = 6.5V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
0 VGS = 4.0V
0 2468
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ BUZ20 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BUZ20 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ20 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
BUZ20 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ201 | main ratings | Siemens Semiconductor Group |