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BUZ171のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)」です。 |
部品番号 | BUZ171 |
| |
部品説明 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUZ171ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
BUZ 171
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 171
VDS
-50 V
ID
-8 A
RDS(on)
0.3 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -8 A, VDD = -25 V, RGS = 25 Ω
L = 1.1 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1450-A2
Values
-8
Unit
A
-32
mJ
70
± 20
40
-55 ... + 150
-55 ... + 150
≤ 3.1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 Page BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = -5 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Rise time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
Fall time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.5
-
-
-
-
-
-
-
2.3 -
750 1000
270 400
120 180
20 30
110 170
70 90
100 140
Unit
S
pF
ns
Semiconductor Group
3
07/96
3Pages BUZ 171
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-18 Ptot = 40W
l
A
ID -14
VGS [V]
k a -4.0
b -4.5
c -5.0
-12
d -5.5
j
e -6.0
-10 f -6.5
g -7.0
-8 i h -7.5
h i -8.0
-6 g j -9.0
k -10.0
f l -20.0
-4 e
d
-2 c
b
0a
0 -2 -4 -6 -8 -10 -12 -14 -16 V -19
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.9 a b c d e f g
Ω
h
RDS (on) 0.7
i
0.6
0.5
0.4
0.3
j
0.2
0.1
VGS [V] =
ab
c
d
e
f
ghi
j
-45.05 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0
0.0
0 -2 -4 -6 -8 -10 -12 A
ID
-16
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
-15
A
ID -12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
4.0
S
gfs 3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 -2 -4 -6 -8 -10 -12 A -15
ID
Semiconductor Group
6
07/96
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ BUZ171 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BUZ17 | main ratings | Siemens Semiconductor Group |
BUZ171 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
BUZ172 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
BUZ173 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |