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BUZ171 の電気的特性と機能

BUZ171のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ171
部品説明 SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ171 Datasheet, BUZ171 PDF,ピン配置, 機能
BUZ 171
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 171
VDS
-50 V
ID
-8 A
RDS(on)
0.3
Maximum Ratings
Parameter
Continuous drain current
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -8 A, VDD = -25 V, RGS = 25
L = 1.1 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1450-A2
Values
-8
Unit
A
-32
mJ
70
± 20
40
-55 ... + 150
-55 ... + 150
3.1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ171 pdf, ピン配列
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = -5 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50
Rise time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50
Fall time
VDD = -30 V, VGS = -10 V, ID = -2.9 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
1.5
-
-
-
-
-
-
-
2.3 -
750 1000
270 400
120 180
20 30
110 170
70 90
100 140
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ171 電子部品, 半導体
BUZ 171
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-18 Ptot = 40W
l
A
ID -14
VGS [V]
k a -4.0
b -4.5
c -5.0
-12
d -5.5
j
e -6.0
-10 f -6.5
g -7.0
-8 i h -7.5
h i -8.0
-6 g j -9.0
k -10.0
f l -20.0
-4 e
d
-2 c
b
0a
0 -2 -4 -6 -8 -10 -12 -14 -16 V -19
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.9 a b c d e f g
h
RDS (on) 0.7
i
0.6
0.5
0.4
0.3
j
0.2
0.1
VGS [V] =
ab
c
d
e
f
ghi
j
-45.05 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0
0.0
0 -2 -4 -6 -8 -10 -12 A
ID
-16
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
-15
A
ID -12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
4.0
S
gfs 3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 -2 -4 -6 -8 -10 -12 A -15
ID
Semiconductor Group
6
07/96

6 Page



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部品番号部品説明メーカ
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main ratings

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ171

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ172

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ173

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens Semiconductor Group
Siemens Semiconductor Group


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