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Número de pieza | BUZ104SL | |
Descripción | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ104SL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 104 SL
VDS
55 V
ID
12.5 A
RDS(on)
0.12 Ω
BUZ 104 SL
SPP13N05L
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4006-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 12.5 A, VDD = 25 V, RGS = 25 Ω
L = 666 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 12.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
12.5
8.8
50
52
12.5
3.5
6
± 14
35
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998
1 page BUZ 104 SL
SPP13N05L
Power dissipation
Ptot = ƒ(TC)
36
W
Ptot 28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 2
tp = 3.6µs
A
I
D
10 µs
10 1
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 4 V
13
A
11
ID 10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
100 µs
10 -1
D = 0.50
10 0
1 ms
0.20
0.10
10 ms
DC
10 -2
single pulse
0.05
0.02
0.01
10 -1
10 0
10 1 V 10 2
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
29/Jan/1998
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BUZ104SL.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ104S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) | Siemens Semiconductor Group |
BUZ104SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature) | Siemens Semiconductor Group |
BUZ104SL-4 | SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) | Siemens Semiconductor Group |
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