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BUZ102SL-4 の電気的特性と機能

BUZ102SL-4のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ102SL-4
部品説明 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ102SL-4 Datasheet, BUZ102SL-4 PDF,ピン配置, 機能
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 102SL-4
Type
VDS
BUZ 102SL-4 55 V
ID
6.2 A
RDS(on)
0.033
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 6.2 A, VDD = 25 V, RGS = 25
L = 12.7 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 6.2 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
6.2
Unit
A
24.8
mJ
245
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
23/Oct/1997

1 Page





BUZ102SL-4 pdf, ピン配列
Preliminary data
BUZ 102SL-4
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 6.2 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 6.2 A
RG = 3.6
Rise time
VDD = 30 V, VGS = 5 V, ID = 6.2 A
RG = 3.6
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 6.2 A
RG = 3.6
Fall time
VDD = 30 V, VGS = 5 V, ID = 6.2 A
RG = 3.6
Gate charge at threshold
VDD = 40 V, ID 0.1 A, VGS =0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 6.2 A, VGS =0 to 5 V
Gate charge total
VDD = 40 V, ID = 6.2 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 6.2 A
gfs
Ciss
Coss
Crss
td(on)
5
-
-
-
-
tr
td(off)
-
-
tf
-
Qg(th)
-
Qg(5)
-
Qg(total)
-
V(plateau)
-
Semiconductor Group
3
11
1380
-
1730
S
pF
410 515
230 290
ns
25 40
37 55
75 115
37 55
nC
2.5 3.75
37 55
62 93
2.6 -
V
23/Oct/1997


3Pages


BUZ102SL-4 電子部品, 半導体
Preliminary data
BUZ 102SL-4
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
14
A
kljihgPfetodt = 2W
12
ID 11
10
9
8
7
6
5
4
3
VGS [V]
a 2.5
b
c
c
3.0
3.5
d 4.0
e 4.5
f 5.0
g 5.5
h 6.0
i 6.5
j 7.0
b k 8.0
l 10.0
2
1
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.10
a
b
RDS
0.08
(on)
0.07
0.06
0.05
0.04
c
0.03
0.02
d
e
ijk gf h
VGS [V] =
0.01 a b c d e f
23.50 3.5 4.0 4.5 5.0 5.5
0.00
ghi j
6.0 6.5 7.0 8.0
k
10.0
0 2 4 6 8 A 12
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
80
A
ID
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
23/Oct/1997

6 Page



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共有リンク

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部品番号部品説明メーカ
BUZ102SL-4

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

Siemens Semiconductor Group
Siemens Semiconductor Group


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